| PART |
Description |
Maker |
| Q62702-B0862 BBY5302W BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
|
SIEMENS[Siemens Semiconductor Group]
|
| BBY58-02L BBY58-02V BBY58-05W BBY58-06W BBY58-07L4 |
Silicon Tuning Diodes 硅调谐二极管
SHOWCASE CABINET 硅调谐二极管
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
|
INFINEON[Infineon Technologies AG]
|
| BBY51-02L BBY51 BBY51-03W BBY51-02W |
Silicon Tuning Diode
Varactordiodes - Silicon high Q hyperabrupt tuning diode
Varactordiodes - Silicon high Q hyperabrupt dual tuning diode
|
INFINEON[Infineon Technologies AG]
|
| BBY52-02W Q62702-B0860 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 3.10 inch width x 1.87 inch depth, Textured Black Finish
Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MMVL2101NBSP MMVL2101T1 MMVL2101 MMVL2101T1-D |
Silicon Tuning Diode
Silicon Tuning Diode 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
| MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
| KDV262E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
| KDV214 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|
| KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|
| SVC203C09 |
Diffused Junction Type Silicon Diode Varactor Diode for FM Low-Voltage Electronic Tuning Use
|
Sanyo Semicon Device
|
